| PART |
Description |
Maker |
| HY67V161610D HY67V161610DTC HY67V161610DTC-10 HY67 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
Hynix Semiconductor
|
| IC42S32202 |
512K x 32 Bit x 4 Banks (64-MBIT) SDRAM
|
Integrated Circuit Solution
|
| M12L64322A-5BG M12L64322A-5TG M12L64322A-6BG M12L6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| A43E06321 |
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM
|
AMICC
|
| IC42S16102 IC42S16102-5BG IC42S16102-5BIG IC42S161 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
| M32L32321SA-5Q M32L32321SA-6F M32L32321SA-6Q M32L3 |
From old datasheet system
512K x 32 Bit x 2 Banks Synchronous Graphic RAM
|
ETC
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IC42S32202 IC42S32202L IC42S32202L-6BG IC42S32202L |
512K x 32 Bit x 4 Banks (64-MBIT) SDRAM
From old datasheet system
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| A43E06321G-95UF A43E06321G-75UF A43E06321G-75F A43 |
General Purpose
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM 12k × 32位2银行低功耗同步DRAM
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
